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| DSS 17-06CR HiPerDynTM Schottky Diode (Electrically Isolated Back Surface) IFAV = 17 A VRRM = 600 V trr = 45 ns Preliminary Data VRSM V 600 VRRM V 600 DSS 17-06CR Type A C ISOPLUS 247TM C A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 95C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 17 tbd 200 tbd tbd -55...+175 175 -55...+150 A A A A mJ A C C C W V~ N g q q q q Features q TC = 25C 50/60 Hz RMS; IISOL 1 mA mounting force with clip typical 105 2500 20...120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 15 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 0.5 5 2.71 3.32 1.4 0.25 mA mA V V K/W K/W ns A q q q VF y RthJC RthCH trr IRM q q q q IF = 10 A; -di/dt = 100 A/s; VR = 100 V; TVJ = 25C VR = 100 V; IF = 10 A; -diF/dt = 100 A/s TVJ = 25C 45 4.0 Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q q q Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf 048 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 DSS 17-06CR 100 A IF IR 10 mA TVJ=175C 1000 pF 1 150C 125C CT 0.1 10 100C TVJ = 175C 150C 125C 25C 100 0.01 75C 50C 0.001 25C TVJ= 25C 1 0 1 2 3 VF 4 V5 0.0001 0 200 400 V VR 600 10 0 200 400 V VR 600 Fig. 1 Maximum forward voltage drop characteristics 30 A 25 IF(AV) 20 15 10 5 0 0 40 80 TC 120 C 160 d=0.5 DC Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 70 W 60 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR P(AV) A IFSM d= DC 0.5 0.33 0.25 0.17 0.08 50 40 30 20 10 0 0 5 10 15 20 IF(AV) 25 A s tP Fig. 4 Average forward current IF(AV) versus case temperature TC 2 1 K/W ZthJC D=0.5 0.33 0.25 0.17 0.08 Single Pulse Fig. 5 Forward power loss characteristics 0.1 0.01 0.0001 DSS17-06CR 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode (c) 2000 IXYS All rights reserved 2-2 |
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